Фотопроводимость монокристаллов слоистого полупроводника p-GaSe, легированного редкоземельными элементами, и многодиапазонный фотоприемник света на их основе

The main characteristics of intrinsic photoconductivity and the spectra negative induced by impurity photoconductivity, infrared quenching in doped REE (gadolinium dysprosium) at N = 0−10−1 at%, p-GaSe single crystals are experimentally investigated. It is shown that instability irreproducibility photoelectric this semiconductor due to fluctuations electronic potential associated with presence random macroscopic defects. dependence parameters on N, as well ensuring a high degree their stability reproducibility ≈ 10−1 corresponding changes fraction covalent bonds between layers, depending N. Shown possibility creating multi-range photodetector light stable, reproducible based p-GaSe<REE> 10−2−10−1 at%.